Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

作者： Xiang Zhang*1,2, Zhaolong Chen*3, Hongliang Chang1,2, Jianchang Yan1,2, Shenyuan Yang2,4, Junxi Wang1,2, Peng Gao5, Tongbo Wei1,2 1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors,Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering,Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics,Peking University

简介：

Overview

This article presents a protocol for the graphene-assisted growth of high-quality aluminum nitride (AlN) films on nano-patterned sapphire substrates. This method aims to facilitate the rapid and cost-effective production of high-performance deep ultraviolet LEDs.

Key Study Components

Area of Science

• Material Science
• Nanotechnology
• Optoelectronics

Background

• Aluminum nitride is a key material for deep ultraviolet LEDs.
• Graphene layers can enhance the growth quality of AlN films.
• Nano-patterned sapphire substrates (NPSS) provide a suitable template for film growth.
• Rapid growth methods are essential for commercial applications.

Purpose of Study

• To develop a protocol for the efficient growth of AlN films.
• To explore the use of graphene as a template for improved film quality.
• To enable the production of high-performing deep ultraviolet LEDs.

Methods Used

• Rinsing NPSS with acetone, ethanol, and deionized water.
• Drying NPSS using a nitrogen gun.
• Loading NPSS into a three-zone high-temperature furnace.
• Heating the furnace to 1050 degrees Celsius for film growth.

Main Results

• The protocol successfully enables the growth of high-quality AlN films.
• Graphene layers significantly improve the growth potential of AlN.
• This method shows promise for the development of aluminum and gallium nitride-based LEDs.
• Rapid and inexpensive generation of LEDs is achievable with this approach.

Conclusions

• The graphene-assisted growth protocol is effective for AlN films.
• This technique can lead to advancements in LED technology.
• Further research may enhance the scalability of this method.

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